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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21060/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. * Typical W - CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offset @ 4.096 MHz BW, 15 DTCH Output Power -- 6.0 Watts Power Gain -- 12.5 dB Drain Efficiency -- 15% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. N - Channel Enhancement - Mode Lateral MOSFETs MRF21060R3 MRF21060SR3 2170 MHz, 60 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 465 - 06, STYLE 1 NI - 780 MRF21060R3 CASE 465A - 06, STYLE 1 NI - 780S MRF21060SR3 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 180 0.98 - 65 to +150 200 Unit Vdc Vdc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 1.02 Unit C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21060R3 MRF21060SR3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 2.5 -- -- -- 3.9 0.27 4.7 4 4.5 -- -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 6 1 Vdc Adc Adc Symbol Min Typ Max Unit Freescale Semiconductor, Inc... Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Pout, 1 dB Compression Point (VDD = 28 Vdc, Pout = 60 W CW, f = 2170 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. Crss -- 2.7 -- pF Gps 11 12.5 -- dB 31 34 -- % IMD -- - 30 - 28 dBc IRL -- - 12 -- dB P1dB -- 60 -- W No Degradation In Output Power Before and After Test MRF21060R3 MRF21060SR3 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. R4 VGG + + C1 R2 C2 C3 C4 C5 R1 R3 + C6 C7 C8 B2 B3 VDD + Z8 Z9 Z10 RF INPUT Z1 C9 Z2 Z3 Z4 Z5 Z6 Z7 Z11 Z12 Z13 Z14 C11 C12 Z15 RF OUTPUT Freescale Semiconductor, Inc... C10 DUT B2 - B3 C1 C2, C7 C3, C8 C4, C5 C6 C9, C11 C10 C12 R1 R2 R3 R4 Z1 Z2 Ferrite Beads, Fair Rite #2743019447 10 F, 50 V Electrolytic Chip Capacitor, Panasonic #ECEV1HV100R 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.10 F Chip Capacitors, Kemet #CDR33BX104AKWS 4.7 pF Chip Capacitors, ATC #100B4R7JCA500X 22 F, 35 V Tantalum Surface Mount Chip Capacitor, Sprague 9.1 pF Chip Capacitors, ATC #100B9R1JCA500X 0.8 pF - 8.0 pF Variable Capacitor, Johanson Gigatrim 0.4 pF - 4.5 pF Variable Capacitor, Johanson Gigatrim 1 k, 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 560 k, 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 10 , 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 10 , 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 0.743 x 0.080 Microstrip 0.070 x 0.100 Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Board 0.180 x 0.100 Microstrip 0.152 x 0.293 Microstrip 0.216 x 0.100 Microstrip 0.114 x 0.410 Microstrip 0.626 x 0.872 Microstrip 1.050 x 0.050 Microstrip 0.830 x 0.050 Microstrip 0.596 x 1.040 Microstrip 0.186 x 0.315 Microstrip 0.097 x 0.525 Microstrip 0.353 x 0.138 Microstrip 0.112 x 0.080 Microstrip 0.722 x 0.080 Microstrip 0.030 Glass Teflon, Arlon GX - 0300 - 55 - 22, 2 oz Cu Figure 1. MRF21060 Test Circuit Schematic MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21060R3 MRF21060SR3 3 Freescale Semiconductor, Inc. TO DRAIN BIAS FEEDTHRU B2 B3 C7 C8 TO GATE BIAS FEEDTHRU C1 R1 C2 C3 C4 R2 R3 C5 C6 R4 C9 C11 C10 C12 Freescale Semiconductor, Inc... MRF21060 Figure 2. MRF21060 Test Circuit Component Layout MRF21060R3 MRF21060SR3 4 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS , DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc IDQ = 700 mA, f = 2140 MHz, Channel Spacing (Channel Bandwidth): 5 MHz @ 4.096 MHz BW 15 DTCH ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 0 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 IRL VDD = 28 Vdc Pout = 60 W (PEP), IDQ = 500 mA Two-Tone Measurement, 100 kHz Tone Spacing Gps IMD -35 -40 2200 0 -5 -10 -15 -20 -25 -30 , DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) 45 40 35 30 25 ACPR 20 15 10 5 2 4 6 8 10 12 14 Pout, OUTPUT POWER (WATTS Avg.) W-CDMA Gps -20 -25 -30 -35 -40 -45 -50 -55 -60 16 Freescale Semiconductor, Inc... Figure 3. Class AB Broadband Circuit Performance Figure 4. W - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power -25 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -30 -35 -40 900 mA -45 -50 -55 -60 -65 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 500 mA 700 mA VDD = 28 Vdc f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing -20 -30 -40 3rd Order -50 -60 -70 -80 0.1 5th Order 7th Order VDD = 28 Vdc IDQ = 700 mA, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 5. Intermodulation Distortion versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power 14 900 mA G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 13 700 mA 12 500 mA 11 14 Pout = 60 W (PEP), IDQ = 500 mA f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing IMD 13 Gps 12.5 -22 -24 -26 -28 -30 -32 -34 -36 13.5 VDD = 28 Vdc f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 1.0 10 100 10 0.1 12 22 24 26 28 30 -38 32 Pout, OUTPUT POWER (WATTS) PEP VDD, DRAIN VOLTAGE (VOLTS) Figure 7. Power Gain versus Output Power Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21060R3 MRF21060SR3 5 Freescale Semiconductor, Inc. f = 2110 MHz Zsource f = 2110 MHz 2170 MHz Zload 2170 MHz Freescale Semiconductor, Inc... Zo = 5 VDD = 28 V, IDQ = 500 mA, Pout = 60 W PEP f MHz 2110 2140 2170 Zsource 2.40 - j0.55 2.26 - j0.87 2.08 - j1.23 Zload 3.07 - j2.05 2.89 - j2.38 2.66 - j2.71 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF21060R3 MRF21060SR3 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M 3 (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N (LID) M TA B M ccc M TA M B M S M (INSULATOR) Freescale Semiconductor, Inc... H ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE F NI - 780 MRF21060R3 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF (FLANGE) B 2 2X K D bbb M TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C T M TA B M M M STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE E A (FLANGE) A SEATING PLANE CASE 465A - 06 ISSUE F NI - 780S MRF21060SR3 F MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21060R3 MRF21060SR3 7 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF21060R3 MRF21060SR3 8 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE MRF21060/D DATA |
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